A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation

AbstractAn AlGaN/GaN hetero field effect transistor (HFET) was operated at 20 A. Its on-state resistance was lower than that of a Si-based FET. GaN and related materials were grown by gas-source molecular beam epitaxy (GSMBE). Sapphire substrates were used for GaN growth. An undoped GaN/Al0.2Ga0.8N heterostructure wasgrown on the substrate. The sheet carrier density of two dimensional electron gas was 1x1013 cm2 and the mobility was 1200 cm2/Vs at room temperature. The breakdown field of undoped high resistive GaN layer was about 2.0 MV/cm. Al0.2Ga0.8N/GaN HFET for a large current operation was fabricated. The gate width was 20 cm and thegate length was 2000 nm. The electrode material of the source and the drain was Al/Ti/Au and the Schottky electrodes were Pt/Au. The distance between the source and the drain was 6000 nm. The maximum breakdown voltage of gate and source was 600 V. The on-state resistance of the HFET was about 2 mohm•cm2 at 100 V. The transconductance (gm) of this HFET was about 120 mS/mm. It was confirmed that the HFET with a gate width of20 cm could be operated at the condition of a large current operation.

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AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1527 ◽

2002 ◽

Vol 389-393 ◽

pp. 1527-1530 ◽

Cited By ~ 13

Author(s):

Seikoh Yoshida ◽

Hirotatsu Ishii ◽

Jiang Li

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Large Current ◽

Effect Transistor ◽

Current Operation

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Fabrication of a High-Power Gan Metal Semiconductor Field-Effect Transistor

MRS Proceedings ◽

10.1557/proc-639-g13.4 ◽

2000 ◽

Vol 639 ◽

Author(s):

Seikoh Yoshida ◽

Hirotatsu Ishii

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Electrode Materials ◽

Chemical Vapor ◽

Etching Technique ◽

Gate Electrodes ◽

Large Current ◽

Effect Transistor ◽

A Current

ABSTRACTA high-power metal semiconductor field-effect transistor (MESFET) for operating at a very large-current using GaN is reported for the first time. GaN was grown by metalorganic chemical vapor deposition (MOCVD). Sapphire substrates were used for GaN growth. A GaN MESFET with a large size was fabricated. Multi-finger gates were used for large-current operation. The total gate width was 8 cm and the gate length was 2 νm. The electrode materials of the source and the drain were Al/Ti/Au and the schottky electrodes were Pt/Au. The gate, source, and drain were isolated using SiO2. An FET structure was fabricated using a dry-etching technique. Multi-electrode structures were also fabricated using SiO2 for isolating the source, drain, and gate electrodes, respectively. The FET was operated at a current of over 5 A. The breakdown voltage was over 500 V. The transconductance (gm) was about 12 mS/mm. The pinch-off voltage was about -8 V. We confirmed that this GaN MESFET can also be operated at a current of 10 A.

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An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽

10.3390/mi9110573 ◽

2018 ◽

Vol 9 (11) ◽

pp. 573 ◽

Cited By ~ 6

Author(s):

Hujun Jia ◽

Mei Hu ◽

Shunwei Zhu

Keyword(s):

Breakdown Voltage ◽

Threshold Voltage ◽

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Power Added Efficiency ◽

Effect Transistor ◽

The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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